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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING
4-C2
24.0+/-0.6
*High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz *High Efficiency: 60%typ.on HF Band
2
10.0+/-0.3
FEATURES
9.6+/-0.3
0.1 -0.01
3
+0.05
R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W
W A C C C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=30MHz ,VDD=12.5V Pin=7W, Idq=1.0A VDD=15.2V,Po=100W(Pin Control) f=30MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.5 100 55 LIMITS TYP MAX. 10 1 4.5 110 60 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD100HHF1
3.3+/-0.2
MITSUBISHI ELECTRIC
1/7
REV.3 8 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
200 CHANNEL DISSIPATION Pch(W) 160
80 40 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
120
0
1
2
3 4 Vgs(V)
5
6
7
Vds-Ids CHARACTERISTICS 10
Ta=+25C Vgs=6V
Vds VS. Ciss CHARACTERISTICS 300 250 200
Vgs=5.4V Vgs=5.1V Vgs=4.8V Vgs=4.5V Ta=+25C f=1MHz
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
Vgs=5.7V
Ciss(pF)
Ids(A)
150 100 50 0 0 10 Vds(V) 20 30
Vgs=4.2V
Vds VS. Coss CHARACTERISTICS 500 400 Coss(pF) 300 200 100 0 0 10 Vds(V) 20 30
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 40
Ta=+25C f=1MHz
30 Crss(pF)
20
10
0 0 10 Vds(V) 20 30
RD100HHF1
MITSUBISHI ELECTRIC
2/7
REV.3 8 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
Pin-Po CHARACTERISTICS
Silicon MOSFET Power Transistor 30MHz,100W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10
Ta=+25C f=30MHz Vdd=12.5V Idq=1A
120
Po
80
Po d
100 Pout(W) , Idd(A) 80
100 80 60 40 20 0 0 2
70 60 50
Ta=25C f=30MHz Vdd=12.5V Idq=1A
Gp
60 40 20 0
d(%)
40 30 20
Idd
0 0 10 20 30 Pin(dBm) 40
4 6 Pin(W)
8
10
Vdd-Po CHARACTERISTICS 140 120 100 Po(W) 80 60 40 20 0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=30MHz Pin=7W Idq=1A Zg=ZI=50 ohm Po
Vgs-Ids CHARACTERISTICS 2 +25C 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 8 6 4 2 0 0 1 2 3 4 Vgs(V) 5 6 7
+75C -25C Vds=10V Tc=-25~+75C
Idd(A)
Idd
RD100HHF1
Ids(A)
MITSUBISHI ELECTRIC
3/7
REV.3 8 APRIL. 2004
d(%)
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
Vdd
Silicon MOSFET Power Transistor 30MHz,100W TEST CIRCUIT(f=30MHz)
Vgg
L2 C1 0-50pF 2.7kOHM*2 220/56pF 20kOHM C3 RF-IN 100OHM 82/220pF 0-50pF 110pF 270pF 4.5 12 20 35 50 52 54 220/56pF L3 4.7OHM*2 L1
330uF,50V
C2
72/72/82pF
L4
C4
RF-OUT
0-110pF
30/30pF
14 35 44 47 60 82 84 86 90 100
87 100 12
C1:330pF*3,0.022uF in parallel C2:33uF*2,220pF in parallel C3:68pF,82pF in parallel C4:15pF,18pF in parallel L1:7Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire L2:10Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire L3:4Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire L4:3Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire
8 14
Dimensions:mm Note:Board material-teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
RD100HHF1
MITSUBISHI ELECTRIC
4/7
REV.3 8 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zo=10 f=30MHz Zout
f=30MHz Zin
Zin , Zout f (MHz) 30 Zin (ohm) 8.86-j14.31 Zout (ohm) 0.64-j0.01 Conditions Po=115W, Vdd=12.5V,Pin=7W
RD100HHF1
MITSUBISHI ELECTRIC
5/7
REV.3 8 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
S12 (mag) 0.014 0.014 0.012 0.012 0.009 0.007 0.006 0.005 0.003 0.003 0.004 0.003 0.004 0.005 0.003 0.006 0.007 0.005 0.007 0.008 0.008 0.011 (ang) 5.2 -9.9 -20.7 -34.1 -27.8 -36.9 -54.4 -30.4 13.1 -18.0 45.3 42.3 78.6 80.1 72.0 61.3 67.2 82.2 78.7 69.9 86.8 78.7 (mag) 0.770 0.764 0.786 0.842 0.880 0.908 0.946 0.941 0.952 0.974 0.963 0.971 0.975 0.965 0.972 0.973 0.964 0.974 0.969 0.973 0.973 0.971 S22 (ang) -162.1 -171.6 -171.4 -171.4 -173.6 -174.3 -176.2 -177.4 -178.3 -179.8 179.6 178.6 177.5 176.8 176.0 175.1 174.9 173.9 173.3 172.6 171.5 171.7
Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.835 0.839 0.849 0.886 0.915 0.932 0.945 0.951 0.958 0.960 0.964 0.966 0.970 0.967 0.971 0.970 0.969 0.970 0.976 0.973 0.973 0.977 (ang) -158.6 -171.1 -172.9 -173.9 -175.1 -176.4 -177.3 -178.2 -179.3 -179.8 179.5 178.7 178.2 177.5 177.0 176.5 175.6 175.2 174.5 173.9 173.2 172.6 S21 (mag) (ang) 31.451 94.8 10.628 79.3 6.212 71.0 2.749 54.1 1.541 40.2 0.972 31.6 0.671 24.5 0.481 20.1 0.365 15.2 0.291 13.4 0.243 8.5 0.195 6.8 0.154 5.2 0.133 4.8 0.119 1.0 0.109 -1.3 0.092 0.6 0.080 -4.0 0.073 -1.9 0.067 -5.4 0.058 4.1 0.049 -8.7
RD100HHF1
MITSUBISHI ELECTRIC
6/7
REV.3 8 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD100HHF1
MITSUBISHI ELECTRIC
7/7
REV.3 8 APRIL. 2004

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